AON7462 300v,2.5a n-channel mosfet general description product summary 350v@150 i d (at v gs =10v) 2.5 a r ds(on) (at v gs =10v) < 1.5 ? 100% uis tested! 100% r g tested! symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg symbol t 10s steady-state steady-state r jc maximum junction-to-ambient a d max 60 40 maximum junction-to-case avalanche current c 1.4 repetitive avalanche energy c 29 single pulsed avalanche energy g 58 t c =25c maximum junction-to-ambient a r ja c/w 30 parameter power dissipation a typ thermal characteristics units 3.1 w t a =70c junction and storage temperature range -50 to 150 c power dissipation b 10 2 v 30 gate-source voltage t c =100c a i d t c =25c 2.5 1.6 7.2 the AON7462 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 300 pulsed drain current c continuous drain current b a mj continuous drain current t a =25c i dsm 0.9 v/ns 5 p d t a =70c 0.7 mj a w w c/w c/w 4.2 75 5 t c =100c 25 t a =25c p dsm g d s dfn 3x3a_ep top view bottom view pin 1 rev0: feb 2011 www.aosmd.com page 1 of 6
AON7462 symbol min typ max units 300 350 bv dss / ? tj 0.3 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3.5 4.2 4.5 v r ds(on) 1.2 1.5 ? g fs 1.5 s v sd 0.8 1 v i s maximum body-diode continuous current 2.5 a i sm 9a c iss 155 197 240 pf c oss 20 30 40 pf c rss 2pf r g 1.9 3.8 5.7 ? q g 3.5 4.6 5.6 nc q gs 1.3 nc q gd 1.5 nc t d(on) 17 ns t r 8ns t d(off) 26 ns t f 13 ns t rr 62 95 125 ns q rr 0.14 0.22 0.3 c this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c diode forward voltage body diode reverse recovery charge i f =0.9a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =150v, i d =0.9a, r g =25 ? turn-off fall time total gate charge a v v gs =10v, v ds =240v, i d =0.9a v ds =0v, v gs =30v zero gate voltage drain current id=250a, vgs=0v turn-on delaytime gate source charge i dss zero gate voltage drain current v ds =300v, v gs =0v gate drain charge v ds =5v i d =250 a v ds =240v, t j =125c v ds =40v, i d =0.9a gate resistance v gs =0v, v ds =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =0.9a reverse transfer capacitance i f =0.9a,di/dt=100a/ s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters forward transconductance i s =1a,v gs =0v a. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja t 10s value and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. l=60mh, i as =1.4a, v dd =150v, r g =10 ? , starting t j =25c rev0: feb 2011 www.aosmd.com page 2 of 6
AON7462 typical electrical and thermal characteristic s 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0 1 2 3 4 5 0 5 10 15 20 25 v ds (volts) figure 1: on-region characteristics i d (a) v gs =5.5v 6.0v 10 v 6.5v 0.1 1 10 246810 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40 v 25c 125c 1.0 2.0 3.0 4.0 5.0 02468 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( ? ) v gs =10 v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =0.9a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) rev 0: feb 2011 www.aosmd.com page 3 of 6
AON7462 typical electrical and thermal characteristic s 0 3 6 9 12 15 0246810 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =240v i d =0.9a 0 1 10 100 1000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) t j(max) =150c t c =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse sin g le puls e rev 0: feb 2011 www.aosmd.com page 4 of 6
AON7462 typical electrical and thermal characteristic s 0 5 10 15 20 25 30 0 25 50 75 100 125 150 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-ambient (note g) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) z ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =75c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse rev 0: feb 2011 www.aosmd.com page 5 of 6
AON7462 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd char ge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d( on) t on t d(of f ) t f t of f vdd vgs id vgs rg du t - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds is d is d diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev 0: feb 2011 www.aosmd.com page 6 of 6
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